PART |
Description |
Maker |
IC42S16100 IC42S16100-5T IC42S16100-6TG |
512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM DYNAMIC RAM, SDRAM
|
Integrated Circuit Solu... ICSI
|
IC41C16100AS IC41C16100A IC41LV16100AS IC41LV16100 |
DYNAMIC RAM, EDO DRAM 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
|
ICSI[Integrated Circuit Solution Inc]
|
IC41LV44002AS IC41LV44002A IC41C44002A IC41C44002A |
DYNAMIC RAM, EDO DRAM 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
|
ICSI[Integrated Circuit Solution Inc]
|
IS41LV16100B-50T-TR IS41LV16100B-60T-TR IS41LV1610 |
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 50 ns, PDSO44 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 50 ns, PDSO42 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 60 ns, PDSO44
|
天津新技术产业园区管理委员会 Integrated Silicon Solution, Inc.
|
HYB3118165BST-50 HYB5118165BST-50 HYB3118165BSJ-60 |
High-Speed Fully-Differential Amplifiers 8-MSOP -40 to 85 1M X 16 EDO DRAM, 50 ns, PDSO44 1M x 16-Bit Dynamic RAM 1k Refresh 100万16位动态随机存储器经销商刷 1M×16-Bit Dynamic RAM(1M×16动态RAM(快速页面模) 1M×16-Bit Dynamic RAM (Hyper Page Mode-EDO)(1M×16动RAM)
|
Siemens Semiconductor Group SIEMENS AG
|
UPD4265805G5-A50-7JD UPD4264805G5-A50-7JD UPD42658 |
18-Mbit QDR-II SRAM 2-Word Burst Architecture 1-Mbit (64K x 16) Static RAM 1M x 4 Static RAM x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM 4-Mbit (256K x 16) Static RAM
|
NEC TOKIN, Corp.
|
IC41LV16100A IC41LV16100A-50K IC41LV16100A-50T IC4 |
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
|
Integrated Circuit Solution Inc
|
IS45LV44002B-50JLA1 IS45LV44002B-50JA1 IS45LV44002 |
4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
|
ISSI[Integrated Silicon Solution, Inc]
|
IS41C16100 IS41C16100-50K IS41C16100-50KI IS41C161 |
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
|
ISSI[Integrated Silicon Solution, Inc] ISSI[Integrated Silicon Solution Inc]
|
IS41C16100S |
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
|
Integrated Silicon Solution
|